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CHS5100-99F - Reflective SPDT Switch

Datasheet Summary

Description

The CHS5100-99F is a wideband monolithic FET based reflective switch manufactured on a standard power process using 0.7µm Out 2 implanted active layer MESFET, via holes, air bridges and electron beam gate lithography.

This wideband switch is suitable for ultra broadband ECM and EW systems.

Features

  • Broadband performance : DC-20GHz.
  • Low insertion loss : 2.1dB@20GHz.
  • High isolation : 53dB@1GHz.
  • 30dB@20GHz.
  • Excellent input and output matching.
  • VSWR < 1.5:1.
  • Chip size : 1,92 x 1,22 x 0.1mm Main Characteristics Tamb. = +25°C Symbol Parameter Il On state insertion loss Is Off state isolation VSWR Input and output matching Min Typ Max Unit 2.5 dB 25 dB 1.5:1 ESD Protections : Electrostatic sensitive discharge device observe handling precautions !.

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Datasheet Details

Part number CHS5100-99F
Manufacturer United Monolithic Semiconductors
File Size 322.39 KB
Description Reflective SPDT Switch
Datasheet download datasheet CHS5100-99F Datasheet
Additional preview pages of the CHS5100-99F datasheet.

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Full PDF Text Transcription

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CHS5100-99F DC-20GHz Reflective SPDT Switch GaAs Monolithic Microwave IC Description The CHS5100-99F is a wideband monolithic FET based reflective switch manufactured on a standard power process using 0.7µm Out 2 implanted active layer MESFET, via holes, air bridges and electron beam gate lithography. This wideband switch is suitable for ultra broadband ECM and EW systems. It can also be used in instrumentation and wideband signal processing applications. Available in chip form IN Out 1 V2 V1 Main Features  Broadband performance : DC-20GHz  Low insertion loss : 2.1dB@20GHz  High isolation : 53dB@1GHz  30dB@20GHz  Excellent input and output matching  VSWR < 1.5:1  Chip size : 1,92 x 1,22 x 0.1mm Main Characteristics Tamb.
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