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CHS7012-99F - Reflective SPDT

Datasheet Summary

Description

The CHS7012-99F is a monolithic FET based reflective switch in the DC-12GHz frequency band.

It is designed for a wide range of applications, from military to commercial communication systems.

It is developed on a robust 0.25µm gate length GaN/SiC HEMT process and is available as bare die.

Features

  • Broadband performances: DC-12GHz.
  • Insertion Loss: 1.4dB.
  • Isolation: 35dB.
  • Input power at 1dB compression: 40.5dBm.
  • Switching time: 20ns.
  • Control: -25V / 0V.
  • Chip size 1.15x1.65x0.1mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range DC 12 GHz IL On state insertion loss (2) 1.4 dB ISOL Off state isolation 35 dB Ton / Toff Switching time 20 ns 50% control to 90% RF, and 50% control to 10% RF (3.

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Datasheet Details

Part number CHS7012-99F
Manufacturer United Monolithic Semiconductors
File Size 1.22 MB
Description Reflective SPDT
Datasheet download datasheet CHS7012-99F Datasheet
Additional preview pages of the CHS7012-99F datasheet.

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Full PDF Text Transcription

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CHS7012-99F DC-12GHz Reflective SPDT GaN Monolithic Microwave IC Description The CHS7012-99F is a monolithic FET based reflective switch in the DC-12GHz frequency band. It is designed for a wide range of applications, from military to commercial communication systems. It is developed on a robust 0.25µm gate length GaN/SiC HEMT process and is available as bare die. Main Features ■ Broadband performances: DC-12GHz ■ Insertion Loss: 1.4dB ■ Isolation: 35dB ■ Input power at 1dB compression: 40.5dBm ■ Switching time: 20ns ■ Control: -25V / 0V ■ Chip size 1.15x1.65x0.1mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range DC 12 GHz IL On state insertion loss (2) 1.
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