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CHS8618-99F - Reflective SPDT

Datasheet Summary

Description

The CHS8618-99F is a monolithic FET based reflective switch in the 6-18GHz frequency band.

It is designed for a wide range of applications, from military to commercial communication systems.

It is developed on a robust 0.25µm gate length GaN/SiC HEMT process and is available as bare die.

Features

  • Broadband performances: 6-18GHz.
  • Insertion Loss: 1.3dB.
  • Isolation: 34dB.
  • Input power at 1dB IL compression: 42dBm.
  • Switching time: 30ns.
  • Control: -25V / 0V.
  • Chip size 1.65x2.18x0.1mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 6 18 GHz IL On state insertion loss 1.3 dB ISOL Off state isolation 34 dB Ton / Toff Switching time 30 ns 50% control to 90% RF, and 50% control to 10% RF Ref. :.

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Datasheet Details

Part number CHS8618-99F
Manufacturer United Monolithic Semiconductors
File Size 836.60 KB
Description Reflective SPDT
Datasheet download datasheet CHS8618-99F Datasheet
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Full PDF Text Transcription

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CHS8618-99F 6-18GHz Reflective SPDT GaN Monolithic Microwave IC Description The CHS8618-99F is a monolithic FET based reflective switch in the 6-18GHz frequency band. It is designed for a wide range of applications, from military to commercial communication systems. It is developed on a robust 0.25µm gate length GaN/SiC HEMT process and is available as bare die. Main Features ■ Broadband performances: 6-18GHz ■ Insertion Loss: 1.3dB ■ Isolation: 34dB ■ Input power at 1dB IL compression: 42dBm ■ Switching time: 30ns ■ Control: -25V / 0V ■ Chip size 1.65x2.18x0.1mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 6 18 GHz IL On state insertion loss 1.
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