CHS8618-99F Datasheet Reflective Spdt

Manufacturer: United Monolithic Semiconductors

Overview: CHS8618-99F 6-18GHz Reflective SPDT GaN Monolithic Microwave.

Datasheet Details

Part number	CHS8618-99F
Manufacturer	United Monolithic Semiconductors
File Size	836.60 KB
Description	Reflective SPDT
Datasheet	CHS8618-99F-UnitedMonolithicSemiconductors.pdf

The CHS8618-99F is a monolithic FET based reflective switch in the 6-18GHz frequency band.

It is designed for a wide range of applications, from military to mercial munication systems.

It is developed on a robust 0.25µm gate length GaN/SiC HEMT process and is available as bare die.

Broadband performances: 6-18GHz.
Insertion Loss: 1.3dB.
Isolation: 34dB.
Input power at 1dB IL compression: 42dBm.
Switching time: 30ns.
Control: -25V / 0V.
Chip size 1.65x2.18x0.1mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 6 18 GHz IL On state insertion loss 1.3 dB ISOL Off state isolation 34 dB Ton / Toff Switching time 30 ns 50% control to 90% RF, and 50% control to 10% RF Ref. :.

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