CHV1206a98F - Low Phase Noise C band HBT VCO

Datasheet Summary

Description

negative resistor, varactors and buffer amplifiers.

100kHz offset.

Features

C-band VCO + C buffers.
Fully integrated VCO (no need for external resonator).
Low phase noise.
High frequency stability.
On chip self-biased devices.
Available in bare die.
Chip size: 2.7x2.7x0.1mm Frequency (GHz) 6.6 6.4 6.2 6 5.8 5.6 5.4 5.2 5 0 2 4 6 8 10 Vtune (Volts) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter F_out Output frequency range on RF_out port P_out Output power on RF_out port PN_100 SSB Phase Noise @ F_out @ 10.

United Monolithic Semiconductors

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Datasheet Details

Part number	CHV1206a98F
Manufacturer	United Monolithic Semiconductors
File Size	203.54 KB
Description	Low Phase Noise C band HBT VCO
Datasheet	CHV1206a98F Datasheet
Additional preview pages of the CHV1206a98F datasheet.

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Full PDF Text Transcription

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CHV1206a98F Low Phase Noise C band HBT VCO GaAs Monolithic Microwave IC Description The CHV1206a98F is a low phase noise C band HBT voltage controlled oscillator that integrates Vc negative resistor, varactors and buffer amplifiers. It provides an excellent phase noise of 100dBc/Hz at VT 100kHz offset. It is designed for a wide range of applications, from space to commercial communication systems. The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. It is available in chip form. RF out Main Features ■ C-band VCO + C buffers ■ Fully integrated VCO (no need for external resonator) ■ Low phase noise ■ High frequency stability ■ On chip self-biased devices ■ Available in bare die ■ Chip size: 2.7x2.

Published: Jan 26, 2025 |