CHV2411AQDG - GaAs Monolithic Microwave

Datasheet Summary

Description

The CHV2411aQDG is a monolithic multifunction for frequency generation.

It integrates an X-band “push-push” oscillator with frequency control (VCO) thanks to base-collector diodes, used as varactors, a K-band buffer amplifiers and a divider by 8.

The VCO is fully integrated on HBT process.

Features

K-band VCO+K bufffers+Prescaler/8.
Fully integrated VCO (no need for external resonator).
Low phase noise.
High temperature range.
High frequency stability.
On chip self-biased devices.
Standard SMD package: 24L-QFN4x4 Main Characteristics RF Frequency (GHz) UUMMSS VYA2Y34W6168W178AAG YYWW Plastic package +V V_Tune x2 2 ÷8 IF_out RF_out 26.0 25.6 25.2 24.8 24.4 24.0 23.6 23.2 22.8 22.4 22.0 1.0 RF Output Frequency vs Vtune -40°C +25°C +105°C 2.0.

United Monolithic Semiconductors

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Datasheet Details

Part number	CHV2411AQDG
Manufacturer	United Monolithic Semiconductors
File Size	1.29 MB
Description	GaAs Monolithic Microwave
Datasheet	CHV2411AQDG Datasheet
Additional preview pages of the CHV2411AQDG datasheet.

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CHV2411aQDG Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC in QFN package Description The CHV2411aQDG is a monolithic multifunction for frequency generation. It integrates an X-band “push-push” oscillator with frequency control (VCO) thanks to base-collector diodes, used as varactors, a K-band buffer amplifiers and a divider by 8. The VCO is fully integrated on HBT process. All the active devices are internally self-biased. The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. The chip is delivered in a 24 Leads RoHS compliant QFN4x4 package.

Published: Feb 26, 2016 |