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CHV2411AQDG - GaAs Monolithic Microwave

General Description

The CHV2411aQDG is a monolithic multifunction for frequency generation.

It integrates an X-band “push-push” oscillator with frequency control (VCO) thanks to base-collector diodes, used as varactors, a K-band buffer amplifiers and a divider by 8.

The VCO is fully integrated on HBT process.

Key Features

  • K-band VCO+K bufffers+Prescaler/8.
  • Fully integrated VCO (no need for external resonator).
  • Low phase noise.
  • High temperature range.
  • High frequency stability.
  • On chip self-biased devices.
  • Standard SMD package: 24L-QFN4x4 Main Characteristics RF Frequency (GHz) UUMMSS VYA2Y34W6168W178AAG YYWW Plastic package +V V_Tune x2 2 ÷8 IF_out RF_out 26.0 25.6 25.2 24.8 24.4 24.0 23.6 23.2 22.8 22.4 22.0 1.0 RF Output Frequency vs Vtune -40°C +25°C +105°C 2.0.

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Datasheet Details

Part number CHV2411AQDG
Manufacturer United Monolithic Semiconductors
File Size 1.29 MB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHV2411AQDG Datasheet

Full PDF Text Transcription for CHV2411AQDG (Reference)

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CHV2411aQDG Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC in QFN package Description The CHV2411aQDG is a monolithic multifunction for frequency generation...

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The CHV2411aQDG is a monolithic multifunction for frequency generation. It integrates an X-band “push-push” oscillator with frequency control (VCO) thanks to base-collector diodes, used as varactors, a K-band buffer amplifiers and a divider by 8. The VCO is fully integrated on HBT process. All the active devices are internally self-biased. The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. The chip is delivered in a 24 Leads RoHS compliant QFN4x4 package.