CHZ8012-QJA - S-Band 12W GaN High Power Amplifier

Product Overview

United Monolithic Semiconductors

Part number	CHZ8012-QJA
Manufacturer	United Monolithic Semiconductors
File Size	664.50 KB
Description	S-Band 12W GaN High Power Amplifier
Datasheet	CHZ8012-QJA Datasheet
Additional preview pages of the CHZ8012-QJA datasheet.

The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits.

It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.

The CHZ8012-QJA is fully matched on 50 Ohms.

Frequency Range: 2.6-3.4GHz.
Pulsed operating mode.
High power: > 12W.
High Efficiency: > 52%.
DC bias: Vd up to 30Volt.
Low cost package: 28L-DFN 7x7mm² Main Electrical Characteristics Gain (dB), Pout (dBm) & PAE (%) 28 leads DFN package-7x7 mm² VDS = 26V, ID_Q = 180mA, Freq = 3GHz Pulsed mode (400µs, 15%), 25°C 60 55 PAE 50 45 Pout 40 35 30 25 20 Gain 15 10 5 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Input Power (dBm) Perf.

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Published: Jan 27, 2025 |