CHZ8012-QJA Datasheet S-band 12w Gan High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHZ8012-QJA S-Band 12W GaN High Power Amplifier GaN HEMT on SiC and GaAs Monolithic Microwave Matching Circuits in SMD leadless.

Datasheet Details

Part number	CHZ8012-QJA
Manufacturer	United Monolithic Semiconductors
File Size	664.50 KB
Description	S-Band 12W GaN High Power Amplifier
Datasheet	CHZ8012-QJA-UnitedMonolithicSemiconductors.pdf

The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits.

It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.

The CHZ8012-QJA is fully matched on 50 Ohms.

Frequency Range: 2.6-3.4GHz.
Pulsed operating mode.
High power: > 12W.
High Efficiency: > 52%.
DC bias: Vd up to 30Volt.
Low cost package: 28L-DFN 7x7mm² Main Electrical Characteristics Gain (dB), Pout (dBm) & PAE (%) 28 leads DFN package-7x7 mm² VDS = 26V, ID_Q = 180mA, Freq = 3GHz Pulsed mode (400µs, 15%), 25°C 60 55 PAE 50 45 Pout 40 35 30 25 20 Gain 15 10 5 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Input Power (dBm) Perf.

Part Number	Description
CHZ015A-QEG	15W L-Band Driver
CHZ015AaQEG	15W L-Band Driver
CHZ050A-SEA	GaN HEMT
CHZ180A-SEB	180W L-Band HPA
CHZ180AaSEB	180W L-Band HPA
CHZ9012-QFA	S-Band 60W GaN High Power Amplifier