CHZ8012-QJA Datasheet | United Monolithic Semiconductors

S-Band 12W Ga N High Power Amplifier Ga N HEMT on Si C and Ga As Monolithic Microwave Matching Circuits in SMD leadless package Description The CHZ8012-QJA is an S-Band Quasi MMIC Power Amplifier based on Ga N power bar and Ga As input and output matching circuits. It is fabricated using UMS 0.25µm Ga N on Si C and Ga As MMIC High Power UMS Passive technologies. The CHZ8012-QJA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to mercial radar systems. The part is proposed in low cost plastic package providing low parasitic and low thermal resistance. It is supplied in Ro HS pliant SMD package. Main Features - Frequency Range: 2.6-3.4GHz - Pulsed operating mode - High power: > 12W - High Efficiency: > 52% - DC bias: Vd up to 30Volt - Low cost package: 28L-DFN 7x7mm² Main Electrical Characteristics Gain (d B), Pout (d Bm) & PAE (%) 28 leads DFN package-7x7 mm² VDS = 26V, ID_Q = 180m A, Freq = 3GHz Pulsed mode (400µs, 15%), 25°C Pout Gain 5 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Input Power (d Bm) Performances on S-band Evaluation Board Tcase= +25°C, Pulsed mode, VDS=26V, ID_Q=180m A Symbol Parameter Freq Frequency range Gain Linear Gain Pout Saturated Output Power PAE Max Power Added Efficiency Min Typ Max Unit 3.4...