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CHZ8012-QJA - S-Band 12W GaN High Power Amplifier

General Description

The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits.

It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.

The CHZ8012-QJA is fully matched on 50 Ohms.

Key Features

  • Frequency Range: 2.6-3.4GHz.
  • Pulsed operating mode.
  • High power: > 12W.
  • High Efficiency: > 52%.
  • DC bias: Vd up to 30Volt.
  • Low cost package: 28L-DFN 7x7mm² Main Electrical Characteristics Gain (dB), Pout (dBm) & PAE (%) 28 leads DFN package-7x7 mm² VDS = 26V, ID_Q = 180mA, Freq = 3GHz Pulsed mode (400µs, 15%), 25°C 60 55 PAE 50 45 Pout 40 35 30 25 20 Gain 15 10 5 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Input Power (dBm) Perf.

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Datasheet Details

Part number CHZ8012-QJA
Manufacturer United Monolithic Semiconductors
File Size 664.50 KB
Description S-Band 12W GaN High Power Amplifier
Datasheet download datasheet CHZ8012-QJA Datasheet

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Full PDF Text Transcription (Reference)

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CHZ8012-QJA S-Band 12W GaN High Power Amplifier GaN HEMT on SiC and GaAs Monolithic Microwave Matching Circuits in SMD leadless package Description The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies. The CHZ8012-QJA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to commercial radar systems. The part is proposed in low cost plastic package providing low parasitic and low thermal resistance. It is supplied in RoHS compliant SMD package. Main Features ■ Frequency Range: 2.6-3.