CHZ9012-QFA Datasheet | United Monolithic Semiconductors

S-Band 60W Ga N High Power Amplifier Ga N HEMT on Si C and Ga As Monolithic Microwave Matching Circuits in SMD leadless package Description The CHZ9012-QFA is an S-Band Quasi MMIC High Power Amplifier based on Ga N power bar and Ga As input and output matching circuits. It is fabricated using UMS 0.25µm Ga N on Si C and Ga As MMIC High Power UMS Passive technologies. The CHZ9012-QFA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to mercial radar systems. The CHZ9012-QFA is proposed in low cost plastic package providing low parasitic and low thermal resistance. The CHZ9012-QFA is supplied in Ro HS pliant SMD package. Main Features - Frequency Range: 2.7-3.4GHz - Pulsed operating mode - High power: > 60W - High Efficiency: > 50% - DC bias: Vd up to 30Volt - Low cost package: 30L-DFN 8x8mm² - patible UMS Driver: CHZ8012-QJA Main Electrical Characteristics 30 leads DFN package-8x8 mm² VDS = 30V, ID_Q = 800m A, Freq = 3GHz Pulsed mode (400µs, 15%), 25°C Gain (d B), Pout (d Bm) & PAE (%) Pout Gain 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Input Power (d Bm) Performances on S-band Evaluation Board Tcase= +25°C, Pulsed mode, VDS=30V, ID_Q=800m A Symbol Parameter Freq Frequency range Gain Linear Gain Pout Saturated Output Power PAE Max Power Added Efficiency Min Typ Max Unit 3.4...