CHZ9012-QFA Datasheet S-band 60w Gan High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHZ9012-QFA S-Band 60W GaN High Power Amplifier GaN HEMT on SiC and GaAs Monolithic Microwave Matching Circuits in SMD leadless.

Datasheet Details

Part number	CHZ9012-QFA
Manufacturer	United Monolithic Semiconductors
File Size	434.52 KB
Description	S-Band 60W GaN High Power Amplifier
Datasheet	CHZ9012-QFA-UnitedMonolithicSemiconductors.pdf

The CHZ9012-QFA is an S-Band QuasiMMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits.

It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.

The CHZ9012-QFA is fully matched on 50 Ohms.

Frequency Range: 2.7-3.4GHz.
Pulsed operating mode.
High power: > 60W.
High Efficiency: > 50%.
DC bias: Vd up to 30Volt.
Low cost package: 30L-DFN 8x8mm².
Compatible UMS Driver: CHZ8012-QJA Main Electrical Characteristics 30 leads DFN package-8x8 mm² VDS = 30V, ID_Q = 800mA, Freq = 3GHz Pulsed mode (400µs, 15%), 25°C Gain (dB), Pout (dBm) & PAE (%) 60 55 PAE 50 45 Pout 40 35 30 25 20 Gain 15 10 5 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40.

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