Datasheet Details
| Part number | DBES105A |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 58.66 KB |
| Description | Flip-Chip Dual Diode |
| Datasheet |
 DBES105A Datasheet
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General Description
The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology.
The parasitic inductances are reduced and result in a very high operating frequency.
This flip-chip dual diode has been designed for high performance mixer applications.
Key Features
- High cut-off frequencies : 3THz.
- High breakdown voltage : < -5V @ 20µA.
- Good ideality factor : 1.2.
- Low parasitic inductances.
- Low cost technology.
- Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 < -5 Unit µm THz V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSDBES1051.