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DBES105A - Flip-Chip Dual Diode

Description

The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology.

The parasitic inductances are reduced and result in a very high operating frequency.

This flip-chip dual diode has been designed for high performance mixer applications.

Features

  • High cut-off frequencies : 3THz.
  • High breakdown voltage : < -5V @ 20µA.
  • Good ideality factor : 1.2.
  • Low parasitic inductances.
  • Low cost technology.
  • Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 < -5 Unit µm THz V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSDBES1051.

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Datasheet preview – DBES105A

Datasheet Details

Part number DBES105A
Manufacturer United Monolithic Semiconductors
File Size 58.66 KB
Description Flip-Chip Dual Diode
Datasheet download datasheet DBES105A Datasheet
Additional preview pages of the DBES105A datasheet.

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    DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications. Main Features ■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 < -5 Unit µm THz V ESD Protection : Electrostatic discharge sensitive device.
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