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EC2612-99F - 40GHz Super Low Noise pHEMT

Description

The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.

Features

  • low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required. D: Drain G: Gate S: Source Main Features.
  • 0.8dB minimum noise figure @ 18GHz.
  • 1.5dB minimum noise figure @ 40GHz.
  • 12dB associated gain @ 18GHz.
  • 9.5dB associated gain @ 40GHz.
  • Chip size: 0.63 x 0.37 x 0.1 mm Mai.

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Datasheet preview – EC2612-99F

Datasheet Details

Part number EC2612-99F
Manufacturer United Monolithic Semiconductors
File Size 817.61 KB
Description 40GHz Super Low Noise pHEMT
Datasheet download datasheet EC2612-99F Datasheet
Additional preview pages of the EC2612-99F datasheet.

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Full PDF Text Transcription

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EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology. Gate width is 120 µm and the 0.15µm Tshaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required. D: Drain G: Gate S: Source Main Features ■ 0.8dB minimum noise figure @ 18GHz ■ 1.5dB minimum noise figure @ 40GHz ■ 12dB associated gain @ 18GHz ■ 9.5dB associated gain @ 40GHz ■ Chip size: 0.63 x 0.37 x 0.1 mm Main Electrical Characteristics Tamb.
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