EC2612-99F
Description
The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.
Key Features
- 0.8dB minimum noise figure @ 18GHz
- 1.5dB minimum noise figure @ 40GHz
- 12dB associated gain @ 18GHz
- 9.5dB associated gain @ 40GHz
- Chip size: 0.63 x 0.37 x 0.1 mm
- 1.0 -0.7 -0.3 V
- A 0.5-W/mm dissipated power is applied in the channel between the gate and the drain
- For the operating temperature range Ta from -40 °C to 85 °C
- Pdiss The channel temperature Tj should not exceed the ROR value for reliable operation
