EC2612-99F Description
The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology. Gate width is 120 µm and the 0.15µm Tshaped aluminium gate.
EC2612-99F Key Features
- 0.8dB minimum noise figure @ 18GHz
- 1.5dB minimum noise figure @ 40GHz
- 12dB associated gain @ 18GHz
- 9.5dB associated gain @ 40GHz
- Chip size: 0.63 x 0.37 x 0.1 mm
- 30 Nov 21
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- France Tel.: +33 (0) 1 69 86 32 00