Datasheet Details
| Part number | TC2623 |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 86.84 KB |
| Description | 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor |
| Datasheet |
 TC2623 Datasheet
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General Description
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.
This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer.
It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band.
Key Features
- 0.3dB minimum noise figure @ 5GHz.
- 0.65dB minimum noise figure @ 12GHz.
- 14dB associated gain @ 5GHz.
- 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.3 14 Max 60 0.55 Unit mA dB dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSTC26237003 Specifications sub.