TC2623 - 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

Product Overview

United Monolithic Semiconductors

Part number	TC2623
Manufacturer	United Monolithic Semiconductors
File Size	86.84 KB
Description	12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
Datasheet	TC2623 Datasheet
Additional preview pages of the TC2623 datasheet.

The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.

This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer.

It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band.

0.3dB minimum noise figure @ 5GHz.
0.65dB minimum noise figure @ 12GHz.
14dB associated gain @ 5GHz.
10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.3 14 Max 60 0.55 Unit mA dB dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSTC26237003 Specifications sub.

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Published: Mar 22, 2014 |