TC2623 Description
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band.
TC2623 Key Features
- 0.3dB minimum noise figure @ 5GHz
- 0.65dB minimum noise figure @ 12GHz
- 14dB associated gain @ 5GHz
- 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source
- B.P.46
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