UF3C120040K3S Datasheet | UnitedSiC

35mW - 1200V SiC Cascode | UF3C120040K3S Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with remended RCsnubbers, and any application requiring standard gate drive. CASE G (1) CASE D (2) S (3) Part Number UF3C120040K3S Package TO-247-3L Marking UF3C120040K3S Features w Typical on-resistance RDS(on),typ of 35mW w...