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UF3N065300Z - 650V SiC Normally-on JFET

General Description

UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Key Features

  • w Typical on-resistance RDS(on),typ of 265mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical.

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Datasheet Details

Part number UF3N065300Z
Manufacturer UnitedSiC
File Size 190.43 KB
Description 650V SiC Normally-on JFET
Datasheet download datasheet UF3N065300Z Datasheet

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DATASHEET UF3N065300Z 650V-265mW SiC Normally-on JFET Rev. B, January 2020 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.