UF3N065300Z
Description
United Si C offers the high-performance G3 Si C normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
Part Number UF3N065300Z UF3N065300
Package Die on tape Undiced wafer
Features w Typical on-resistance RDS(on),typ of 265m W w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w Ro HS pliant
Typical applications w Over Current Protection Circuits w DC-AC Inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating
Datasheet: UF3N065300Z
Rev. B, January 2020
Maximum Ratings
Parameter Drain-source voltage
Gate-source voltage
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