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UF3SC065007K4S Datasheet Sic Fet

Manufacturer: UnitedSiC

Overview: 650V-6.7mW SiC FET DATASHEET UF3SC065007K4S CASE CASE D (1) Rev.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the TO-247-4L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Key Features

  • 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 6.7mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.

UF3SC065007K4S Distributor