UF3SC065040B7S
Description
United Silicon Carbide's cascode products co-package its highperformance G3 Si C JFETs with a cascode optimized MOSFET to produce the only standard gate drive Si C device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
42m W
- 650V Si C Cascode | UF3SC065040B7S
Tab
D (Tab)
1 7
G (1)
KS (2)
S (3-7)
Features w Typical on-resistance RDS(on),typ of 42m W w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2
Part Number UF3SC065040B7S
Package D2PAK-7L
Marking UF3SC065040B7S
Typical Applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating
Maximum Ratings
Parameter Drain-source...
