UHB100SC12E1BC3-N Description
9mΩ - 1200V SiC Half-Bridge Module | UHB100SC12E1BC3-N Datasheet United Silicon Carbide's SiC FET products.
UHB100SC12E1BC3-N Key Features
- Typical on-resistance RDS(on),typ of 9mΩ
- Maximum junction temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low COSS
- ESD protected, HBM class 2