UHB100SC12E1BC3-N
Description
9mΩ
- 1200V Si C Half-Bridge Module | UHB100SC12E1BC3-N
United Silicon Carbide's Si C FET products feature a stacked cascode formed using its high-performance G3 Fast Si C JFETs with a optimized MOSFET to produce the only standard gate drive Si C device on the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
Features
- Typical on-resistance RDS(on),typ of 9mΩ
- Maximum junction temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low COSS
- ESD protected, HBM class 2
Part Number
Package
E1B
Marking
Typical Applications
- EV charging
- PV inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Cascode Maximum Ratings
Parameter
Drain-source voltage...
