UJ3C065080K3S Datasheet PDF

UnitedSiC UJ3C065080K3S

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Part No.	UJ3C065080K3S
Datasheet	UJ3C065080K3S Download
Manufacturer	UnitedSiC
Description	MOSFET
Buy	Stock & Price

DESCRIPTION

Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

FEATURES

w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ3C065080K3S Rev. D, December 2019 1

MAXIMUM RATINGS

Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting...