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UJ3C120040K3S Datasheet 1200v Sic Fet

Manufacturer: UnitedSiC

Overview: 1200V-35mW SiC FET DATASHEET UJ3C120040K3S CASE CASE D (2) Rev.

Datasheet Details

Part number UJ3C120040K3S
Manufacturer UnitedSiC
File Size 322.82 KB
Description 1200V SiC FET
Datasheet UJ3C120040K3S-UnitedSiC.pdf

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.

Key Features

  • G (1) 1 23 S (3) w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical.

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