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UJ3C120040K3S - 1200V SiC FET

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • G (1) 1 23 S (3) w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical.

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Datasheet Details

Part number UJ3C120040K3S
Manufacturer UnitedSiC
File Size 322.82 KB
Description 1200V SiC FET
Datasheet download datasheet UJ3C120040K3S Datasheet

Full PDF Text Transcription (Reference)

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1200V-35mW SiC FET DATASHEET UJ3C120040K3S CASE CASE D (2) Rev. D, December 2019 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.