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UJ3D1220KSD Datasheet 1200v Sic Schottky Diode

Manufacturer: UnitedSiC

Overview: Gen-III | 20A - 1200V SiC Schottky Diode | UJ3D1220KSD . Datasheet .

Datasheet Details

Part number UJ3D1220KSD
Manufacturer UnitedSiC
File Size 965.05 KB
Description 1200V SiC Schottky Diode
Datasheet UJ3D1220KSD-UnitedSiC.pdf

General Description

United Silicon Carbide, Inc.

offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes.

With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Key Features

  • w 175°C maximum operating junction temperature w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered w 100% UIS tested w AEC-Q101 qualified 12 3 123 Part Number UJ3D1220KSD Package TO-247-3L Marking UJ3D1220KSD Typical.

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