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UJ3N120065K3S - Silicon Carbide JFET

General Description

UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Key Features

  • w Typical on-resistance RDS(on),typ of 66mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Part Number UJ3N120065K3S Package TO-247-3L Marking UJ3N120065K3S Typical.

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Datasheet Details

Part number UJ3N120065K3S
Manufacturer UnitedSiC
File Size 561.21 KB
Description Silicon Carbide JFET
Datasheet download datasheet UJ3N120065K3S Datasheet

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Full PDF Text Transcription (Reference)

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DATASHEET UJ3N120065K3S CASE CASE D (2) 123 G (1) S (3) Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 66 mohm Rev. B, January 2025 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.