UJ3N120065K3S
Description
United Si C offers the high-performance G3 Si C normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
Features w Typical on-resistance RDS(on),typ of 66m W w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w Ro HS pliant
Part Number UJ3N120065K3S
Package TO-247-3L
Marking UJ3N120065K3S
Typical applications w Over Current Protection Circuits w DC-AC Inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating
Datasheet: UJ3N120065K3S
Rev. B, January 2025
Maximum Ratings
Parameter Drain-source voltage
Gate-source voltage
Continuous...
