Datasheet4U Logo Datasheet4U.com

UJ3N120065K3S - Silicon Carbide JFET

Datasheet Summary

Description

UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Features

  • w Typical on-resistance RDS(on),typ of 66mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Part Number UJ3N120065K3S Package TO-247-3L Marking UJ3N120065K3S Typical.

📥 Download Datasheet

Datasheet preview – UJ3N120065K3S

Datasheet Details

Part number UJ3N120065K3S
Manufacturer UnitedSiC
File Size 561.21 KB
Description Silicon Carbide JFET
Datasheet download datasheet UJ3N120065K3S Datasheet
Additional preview pages of the UJ3N120065K3S datasheet.

📁 Similar Datasheet

Other Datasheets by UnitedSiC

Full PDF Text Transcription

Click to expand full text
DATASHEET UJ3N120065K3S CASE CASE D (2) 123 G (1) S (3) Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 66 mohm Rev. B, January 2025 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
Published: |