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UJ4SC075006K4S - 750V SiC FET

General Description

The UJ4SC075006K4S is a 750V, 5.9mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • 1 2 34 G (4) KS (3) S (2) w On-resistance RDS(on): 5.9mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 440nC w Low body diode VFSD: 1.03V w Low gate charge: QG =164nC w Threshold voltage VG(th): 4.7V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Part Number UJ4SC075006K4S Package TO-247-4L Marking UJ4SC075006K4S Typical.

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Datasheet Details

Part number UJ4SC075006K4S
Manufacturer UnitedSiC
File Size 737.98 KB
Description 750V SiC FET
Datasheet download datasheet UJ4SC075006K4S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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750V-5.9mW SiC FET DATASHEET UJ4SC075006K4S CASE CASE D (1) Rev. B, July 2021 Description The UJ4SC075006K4S is a 750V, 5.9mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. Features 1 2 34 G (4) KS (3) S (2) w On-resistance RDS(on): 5.