DESCRIPTION
United Silicon Carbide's cascode products co-package its xJ series highperformance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. CASE G (1) CASE D (2) 123 S (3) Part Number UJC06505K Package TO-247-3L Marking UJC06505K FEATURES
w Max. on-resistance RDS(on)max of 45mW w Standard 12V gate drive w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical APPLICATIONS
w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating MAXIMUM RATINGS
Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Short-circuit withstand time 3 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 Seconds 1 Limited by TJ,m...
UnitedSiC
