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MIE-111A1 - AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-111A1 is a AlGaAs/GaAs infrared emitting diode molded in diffused, lensed side looking package .

The MIE-111A1 provides a broad range of intensity selection .

Key Features

  • l 0.5 TYP. (.020) 1.0 MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity l Low cost, plastic side looking package C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Solde.

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Datasheet Details

Part number MIE-111A1
Manufacturer Unity Opto Technology
File Size 28.69 KB
Description AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-111A1 Datasheet

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MIE-114A1 GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-111A1 is a AlGaAs/GaAs infrared emitting diode molded in diffused, lensed side looking package . The MIE-111A1 provides a broad range of intensity selection . 5.72±0.2 (.225±.007) 4.45±0.2 (.175±.007) 2.22 (.087) (.087) MIE-111A1 Package Dimensions Unit: mm ( inches ) 0.76±0.1 (.030±.004) 1.55±.02 (.061±.007) 4.5±0.1 (.177±.004) 12.7 MIN. (.500) CATHODE Features l 0.5 TYP. (.020) 1.0 MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity l Low cost, plastic side looking package C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead spacing is measured where the leads emerge from the package.