MIE-114H4 - AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Unity Opto Technology

General Description

The MIE-114H4 is a AlGaAs infrared emitting diode molded in clear, lensed side looking package .

The MIE-114H4 provides a broad range of intensity selection .

Key Features

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MIE-114H4 algaas high power side look package infrared emitting diode by Unity Opto Technology - Datasheet Preview

Datasheet Details

Part number	MIE-114H4
Manufacturer	Unity Opto Technology
File Size	29.14 KB
Description	AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Datasheet	MIE-114H4 Datasheet

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Other Datasheets by Unity Opto Technology

Part Number	Description
MIE-114A1	GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114A2	GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114G1	GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114L3	GaAlAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-111A1	AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

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AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114H4 is a AlGaAs infrared emitting diode molded in clear, lensed side looking package . The MIE-114H4 provides a broad range of intensity selection . 5.72±0.2 (.225±.008) MIE-114H4 Unit: mm ( inches ) Package Dimensions 4.45±0.20 (.175±.008) 2.22 (.087) (.087) 1.22±0.10 (.048±.004) 1.55±0.02 (.061±.008) 0.76±0.10 (.030±.008) 12.7 MIN. (.500) Features l CATHODE 0.5 TYP. (.020) 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 High power Mechanically and spectrally matched to the MID-11422 of phototransistor . l C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead spacing is measured where the leads emerge from the package.