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MIE-114L3 - GaAlAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

General Description

molded in clear, lensed side looking package .

The MIE-114L3 provides a broad range of intensity selection .

Key Features

  • l Selected to specific on-line intensity and radiant intensity ranges l Low cost, plastic side looking package Mechanically and spectrally matched to the MID-11422 of phototransistor . 1.0 MIN. (.040) 12.7 MIN. (.500) l.

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Datasheet Details

Part number MIE-114L3
Manufacturer Unity Opto Technology
File Size 29.54 KB
Description GaAlAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-114L3 Datasheet

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Part Number Description
MIE-114A1 GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
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MIE-114H4 AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAlAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114L3 is a GaAlAs infrared emitting diode 4.45±0.2 MIE-114L3 Package Dimensions Unit: mm ( inches ) 0.76±0.1 (.030) molded in clear, lensed side looking package . The MIE-114L3 provides a broad range of intensity selection . 5.72±0.2 (.225) (.175) 2.22 (.087) (.087) 1.55±.02 (.061) 4.5±0.1 (.177) Features l Selected to specific on-line intensity and radiant intensity ranges l Low cost, plastic side looking package Mechanically and spectrally matched to the MID-11422 of phototransistor . 1.0 MIN. (.040) 12.7 MIN. (.500) l CATHODE 0.5 TYP. (.020) 2.54 NOM. (.100) SEE NOTE 3 C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead spacing is measured where the leads emerge from the package.