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MIE-334A4 - AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-334A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Key Features

  • l l l l l l 23.40MIN. (.920) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm ) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : ±15° .50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.4 mm (.0157") max. 3. Lead spacing is measured where the leads emerge from the package. Absolut.

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Datasheet Details

Part number MIE-334A4
Manufacturer Unity Opto Technology
File Size 32.36 KB
Description AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-334A4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-334A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. £r3.00 (.118) MIE-334A4 Package Dimensions Unit : mm (inches ) 4.00 (.157) 5.25 (.207) 1.00 (.040) 0.80 ±0.50 (.031±.020) FLAT DENOTES CATHODE Features l l l l l l 23.40MIN. (.920) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm ) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : ±15° .50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.4 mm (.0157") max. 3.