The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package.
Features
l l l l l
High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 35°
1.00 (.040) FLAT.
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package.
MIE-536A2U
Package Dimensions
φ5.05 (.200)
Unite: mm ( inches )
5.47 (.215) 7.62 (.300) 5.90 (.230)
Features
l l l l l
High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 35°
1.00 (.040) FLAT DENOTES CATHODE
23.4 0MIN. (.920) 0.50 TYP. (.020)
1.00MIN (.040) 2.54 (.100)
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.
MIE-536A2U Datasheet
