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MIE-554A4 - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-554A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Key Features

  • 23.4 MIN. (.920) l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ5mm) package Peak wavelength λP =940 nm Good spectral matching to si-photodetecto 2.54NOM. (.100) SEE NOTE 3 1.0MIN. (.040) 0.5 TYP. (.020) l l l l l Radiant angle : 50° A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the packa.

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Datasheet Details

Part number MIE-554A4
Manufacturer Unity Opto Technology
File Size 33.90 KB
Description AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-554A4 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-554A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 7.62 (.300) 5.90 (.230) MIE-554A4 Package Dimensions Unit:mm( inch) φ5.05 (.200) 5.47 (.215) SEE NOTE 2 1.0 (.040) FLAT DENOTES CATHODE Features 23.4 MIN. (.920) l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ5mm) package Peak wavelength λP =940 nm Good spectral matching to si-photodetecto 2.54NOM. (.100) SEE NOTE 3 1.0MIN. (.040) 0.5 TYP. (.020) l l l l l Radiant angle : 50° A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.