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MIE-814A2 - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Datasheet Summary

Description

The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Features

  • l l l l 2.00(.079) 0.50 (.020) 28 typ (1.102) High radiant power and high radiant intesity Suitable for DC and high pulse current operation Peak wavelength λP =940 nm Good spectral matching to Si-Photodetector 2.54NOM. (.100) 2.00±1.00 (.079±.039) C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power.

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Datasheet Details

Part number MIE-814A2
Manufacturer Unity Opto Technology
File Size 32.23 KB
Description AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-814A2 Datasheet
Additional preview pages of the MIE-814A2 datasheet.

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 6.70±0.20 (.264±.008) φ 5.00±0.20 (.197±.008) MIE-814A2 Package Dimensions Unit: mm ( inches ) 1.30 max (.051) Features l l l l 2.00(.079) 0.50 (.020) 28 typ (1.102) High radiant power and high radiant intesity Suitable for DC and high pulse current operation Peak wavelength λP =940 nm Good spectral matching to Si-Photodetector 2.54NOM. (.100) 2.00±1.00 (.079±.039) C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.
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