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MIR-3301 - SUBMINIATURE PHOTOINTERRUPTER

General Description

frared emitting diode and a NPN silicon phototransistor built in a black plastic housing.

It is a reflective subminiature photointerrupter.

Key Features

  • l l l l l Compact and thin 1.5±0.2 2.75±0.2 MIR-3301 : Compact DIP, long lead type Optimum detecting diatance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type ±15° ±15° 0.5±0.1 0.65 10±1.0 0.15 4.0 0~20° 0~20° Absolute Maximum Ratings @ TA=25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range.

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Datasheet Details

Part number MIR-3301
Manufacturer Unity Opto Technology
File Size 55.62 KB
Description SUBMINIATURE PHOTOINTERRUPTER
Datasheet download datasheet MIR-3301 Datasheet

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MIR-3305 SUBMINIATURE PHOTOINTERRUPTER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUBMINIATURE PHOTOINTERRUPTER Description The MIR-3301 consists of a Gallium Arsenide in( Detector center ) ( Emitter center ) MIR-3301 Package Dimensions Unit: mm frared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter. 3.4±0.2 1.80 A D A D B B C C Features l l l l l Compact and thin 1.5±0.2 2.75±0.2 MIR-3301 : Compact DIP, long lead type Optimum detecting diatance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type ±15° ±15° 0.5±0.1 0.65 10±1.0 0.15 4.