Datasheet4U Logo Datasheet4U.com

UM4419 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The UM4419 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet preview – UM4419

Datasheet Details

Part number UM4419
Manufacturer UniverChipSemi
File Size 1.03 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet UM4419 Datasheet
Additional preview pages of the UM4419 datasheet.

📁 Similar Datasheet

  • UM4411 - 4 Line ESD/EMI Protection (Union Semiconductor)
  • UM4401 - 4 Line ESD/EMI Protection (Union Semiconductor)
  • UM400 - 5 to 6 Watt DC-DC Converters (UNIVERSAL MICROELECTRONICS)
  • UM4000 - HIGH POWER PIN DIODES (Microsemi)
  • UM4001 - HIGH POWER PIN DIODES (Microsemi)
  • UM4002 - HIGH POWER PIN DIODES (Microsemi)
  • UM4006 - HIGH POWER PIN DIODES (Microsemi)
  • UM401 - 5 to 6 Watt DC-DC Converters (UNIVERSAL MICROELECTRONICS)
  • UM4010 - HIGH POWER PIN DIODES (Microsemi)
  • UM402 - 5 to 6 Watt DC-DC Converters (UNIVERSAL MICROELECTRONICS)
Other Datasheets by UniverChipSemi
  • UM4406A - N-Channel Enhancement Mode MOSFET
  • UM4407A - P-Channel Enhancement Mode MOSFET
  • UM4409 - P-Channel Enhancement Mode MOSFET
  • UM4423 - P-Channel Enhancement Mode MOSFET
  • UM4435 - P-Channel Enhancement Mode MOSFET
  • UM4447A - P-Channel Enhancement Mode MOSFET
  • UM4459 - P-Channel Enhancement Mode MOSFET
  • UM4606 - 30V Complementary Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
UM4419 -30V P-Channel Enhancement Mode MOSFET  DESCRIPTION The UM4419 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching  FEATURE  -30V/-9.7A, RDS(ON)=14.5mΩ (typ.)@VGS=-10V  -30V/-7.0A, RDS(ON)=18.5mΩ (typ.)@VGS=-4.
Published: |