• Part: UM8814
  • Description: 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: UniverChipSemi
  • Size: 943.94 KB
Download UM8814 Datasheet PDF
UniverChipSemi
UM8814
UM8814 is 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET manufactured by UniverChipSemi.
20V mon-Drain Dual N-Channel Enhancement Mode MOSFET - DESCRIPTION The UM8814 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. - FEATURE - 20V/7.0A, RDS(ON)=15mΩ (typ.)@VGS=4.5V - 20V/6.5A, RDS(ON)=19mΩ (typ.)@VGS=2.5V - 20V/5.0A, RDS(ON)=26mΩ (typ.)@VGS=1.8V - Super high design for extremely low RDS(ON) - Exceptional on-resistance and Maximum DC current...
UM8814 datasheet preview

Related UniverChipSemi Datasheets

Part Number Description
UM8810 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET
UM8820 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET
UM8822 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET