UM9926B Datasheet | UniverChipSemi

20V Dual N-Channel Enhancement Mode MOSFET - DESCRIPTION The UM9926B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. - FEATURE - 20V/5.8A, RDS(ON)=18mΩ (typ.)@VGS=10V - 20V/5.0A, RDS(ON)=24mΩ (typ.)@VGS=4.5V - 20V/3.5A, RDS(ON)=30mΩ (typ.)@VGS=2.5V - Super high design for extremely low RDS(ON) - Exceptional on-resistance and Maximum DC current capability - Full...