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UM9926B - Dual N-Channel Enhancement Mode MOSFET

General Description

The UM9926B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number UM9926B
Manufacturer UniverChipSemi
File Size 1.61 MB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet UM9926B Datasheet

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UM9926B 20V Dual N-Channel Enhancement Mode MOSFET  DESCRIPTION The UM9926B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  FEATURE  20V/5.8A, RDS(ON)=18mΩ (typ.)@VGS=10V  20V/5.0A, RDS(ON)=24mΩ (typ.)@VGS=4.5V  20V/3.5A, RDS(ON)=30mΩ (typ.)@VGS=2.