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UTRON
Rev 1.0 FEATURES
UT6264B
8K X 8 BIT LOW POWER CMOS SRAM
The UT6264B is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT6264B is designed for high-speed and low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT6264B operates from a single 5V power supply and all inputs and outputs are fully TTL compatible.
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Access time : 35/70ns (max.) Low power consumption: Operating : 60/40 mA (typical) Standby :0.