042N10N - N-Channel 100V MOSFET

VBsemi

Key Features

Trench Power MOSFET.
New Package with Low Thermal Resistance.
100 % Rg Tested D D2PAK (TO-263) G GD S S N-Channel MOSFET.

042N10N n-channel 100v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	042N10N
Manufacturer	VBsemi
File Size	328.17 KB
Description	N-Channel 100V MOSFET
Datasheet	042N10N Datasheet

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042N10N-VB 042N10N-VB Datasheet N-Channel 100 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.004 at VGS = 10 V ID (A) 140a FEATURES • Trench Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D D2PAK (TO-263) G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C Avalanche Current Repetitive Avalanche Energyb L = 0.