VBsemi Electronics 052NE7N
The TO-220 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | 052NE7N |
|---|---|
| Datasheet | 052NE7N Download |
| Manufacturer | VBsemi Electronics |
| Description | TO262 N-Channel 80V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
APPLICATIONS
● Primary Side Switching● Synchronous Rectification
● DC/AC Inverters
● LED Backlighting SS D G Top View G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 80 V VGS ± 20 TC = 25 °C 85a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 65 28.6b, c Pulsed Drain Current (t = 100 μs) TA = 70 °C 24.9b, c A IDM 250 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 85 4.5b, c Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS 30 EAS 45 mJ TC = 25 °C 62.5 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 40 5b, c W TA = 70 °C 3.2b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typical 20 1.5 Maximum 25 2.0 Unit °C/W Notes a.
