053N08N - N-Channel 80V MOSFET

Features

TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.

VBsemi

Datasheet Details

Part number	053N08N
Manufacturer	VBsemi
File Size	224.27 KB
Description	N-Channel 80V MOSFET
Datasheet	053N08N Datasheet
Additional preview pages of the 053N08N datasheet.

📁 Similar Datasheet

Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text

053N08N-VB 053N08N-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) () Max. 0.0050 at VGS = 10 V 0.0070 at VGS = 6.0 V 0.0087 at VGS = 5.0 V TO-252 ID (A) 75a 65a 54 Qg (Typ.) 17.1 nC D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting G www.VBsemi.com GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 80 V VGS ± 20 TC = 25 °C 75a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 62.7 28.6b, c Pulsed Drain Current (t = 100 μs) TA = 70 °C 24.

Published: Mar 25, 2025 |