VBsemi Electronics 110N2
N-Channel MOSFET
| Part No. | 110N2 |
|---|---|
| Datasheet | 110N2 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C TC = 25_C TA = 25_C VDS VGS ID IDM IS PD TJ, Tstg 20 "15 100 80 200 65 71 8.3b, c - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t v 10 sec t v 10 sec. Steady State Symbol RthJA RthJC Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 110N2-VB SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage...
