110N2 - N-Channel MOSFET

Features

D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET.

VBsemi

Datasheet Details

Part number	110N2
Manufacturer	VBsemi
File Size	247.64 KB
Description	N-Channel MOSFET
Datasheet	110N2 Datasheet
Additional preview pages of the 110N2 datasheet.

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Full PDF Text Transcription

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110N2-VB 110N2-VB Datasheet N-Channel 20-V (D-S)175 _C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS = 4.5 V 20 0.006 @ VGS = 2.5 V ID (A)a 100 90 TO-252 FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C TC = 25_C TA = 25_C VDS VGS ID IDM IS PD TJ, Tstg 20 "15 100 80 200 65 71 8.

Published: Jul 18, 2024 |