VBsemi Electronics 120P3N
P-Channel 30V MOSFET
| Part No. | 120P3N |
|---|---|
| Datasheet | 120P3N Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC DFN 3x3 EP Top View Bottom View Pin 1
APPLICATIONS
● Load Switch● Adaptor Switch
● Notebook PC S Top View 1 8 2 7 3 6 4 5 G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS - 30 V ± 20 TC = 25 °C - 45 Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 70 °C TA = 25 °C ID TA = 70 °C IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS - 30 - 14.4a, b - 11.5a, b A - 60 - 35e - 3.2a, b - 25 31.25 mJ TC = 25 °C 52 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 43 3.8a, b W TA = 70 °C 2.4a, b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg - 50 to 150 °C 260 Notes: a.
