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12CN10N - N-Channel 100V MOSFET

Datasheet Summary

Features

  • Trench Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

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Datasheet Details

Part number 12CN10N
Manufacturer VBsemi
File Size 393.27 KB
Description N-Channel 100V MOSFET
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    12CN10N-VB TO252 12CN10N-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V ID (A) 85 70 FEATURES • Trench Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter TO-252 D www.VBsemi.com G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 85 ID 75 a A Pulsed Drain Current IDM 300 Avalanche Current Single Pulse Avalanche Energyb IAS 75 L = 0.
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