VBsemi Electronics 16010ALZ
N-Channel MOSFET
| Part No. | 16010ALZ |
|---|---|
| Datasheet | 16010ALZ Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETs
● 175 °C Maximum Junction Temperature
● Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 5.0 4.5 3.5 3.0 A IDM 25 Avalanche Current IAS 15 Single Pulse Avalanche Energy Maximum Power Dissipationa EAS 11 mJ TA = 25 °C TA = 70 °C PD 3.3 1.7 2.3 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit °C/W 1 16010ALZ-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Te...
