18T10GH Key Features
- TrenchFET® Power MOSFET
- 150 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC
- Part: 18T10GH
- Description: N-Channel 100V MOSFET
- Manufacturer: VBsemi
- Size: 245.62 KB
Other 18T10GH Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
18T10 | N-CHANNEL POWER MOSFET |
Advanced Power Electronics Corp |
18T10AGH | AP18T10AGH |