200N6F3 - N-Channel 60V MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
Package with Low Thermal Resistance.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2002/95/EC D G GD S Top View S N-Channel MOSFET.

200N6F3 n-channel 60v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	200N6F3
Manufacturer	VBsemi
File Size	447.83 KB
Description	N-Channel 60V MOSFET
Datasheet	200N6F3 Datasheet

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Full PDF Text Transcription (Reference)

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200N6F3-VB TO220 200N6F3-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-220AB 60 0.003 0.009 210 Single FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.