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20N6LG-TO252 - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature www. VBsemi. com Available RoHS.

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20N6LG-TO252-VB 20N6LG-TO252-VB Datasheet N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 45 40 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature www.VBsemi.com Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 45 35 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.