2318AGEN - N-Channel 60V MOSFET

Datasheet Summary

Features

Halogen-free According to IEC 61249-2-21 Definition.
Low Threshold: 2 V (typ. ).
Low Input Capacitance: 25 pF.
Fast Switching Speed: 25 ns.
Low Input and Output Leakage.
Trench Power MOSFET.
Compliant to RoHS Directive 2002/95/EC.

VBsemi

📥 Download Datasheet

Datasheet Details

Part number	2318AGEN
Manufacturer	VBsemi
File Size	253.60 KB
Description	N-Channel 60V MOSFET
Datasheet	2318AGEN Datasheet
Additional preview pages of the 2318AGEN datasheet.

📁 Similar Datasheet

2318-RC - High Current Toroid Inductors (Bourns)
2310-RC - High Current Toroid Inductors (Bourns)
2310DHI - ST2310DHI (STMicroelectronics)
2310FX - ST2310FX (ST Microelectronics)
2310HI - ST2310HI (STMicroelectronics)
2311-RC - High Current Toroid Inductors (Bourns)
2312-RC - High Current Toroid Inductors (Bourns)
23128 - 128K STATIC READ ONLY MEMORY (Commodore)
2313-RC - High Current Toroid Inductors (Bourns)
2314 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

Other Datasheets by VBsemi

2310 - N-Channel 60V MOSFET

Full PDF Text Transcription

Click to expand full text

2318AGEN-VB 2318AGEN-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA) 250 SOT-23 G1 3D S2 Top View D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • Trench Power MOSFET • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • High-Speed Circuits • Low Error Voltage APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.

Published: Jul 17, 2025 |