VBsemi Electronics 25N10G-TN3-R
N-Channel 100V MOSFET
| Part No. | 25N10G-TN3-R |
|---|---|
| Datasheet | 25N10G-TN3-R Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 100V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFETS● 175 °C Junction Temperature
● Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 GDS Top View G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). (PCB Mount)c * Pb containing terminations are not RoHS compliant, exemptions may apply. Symbol RthJA RthJC Limit 100 ± 20 40 23 120 35 61 107b 3.75 - 55 to 175 Limit 40 1.4 Unit V A mJ W °C Unit °C/W 1 25N10G-TN3-R-VB SPECIFICATIONS TJ = 25 °C,...
