25N10G-TN3-R - N-Channel 100V MOSFET

VBsemi

Key Features

Trench Power.

25N10G-TN3-R n-channel 100v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	25N10G-TN3-R
Manufacturer	VBsemi
File Size	192.24 KB
Description	N-Channel 100V MOSFET
Datasheet	25N10G-TN3-R Datasheet

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25N10G-TN3-R-VB 25N10G-TN3-R-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V 0.035 at VGS = 4.5 V ID (A) 40 37 FEATURES • Trench Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.