25N10G-TN3-R Description
25N10G-TN3-R-VB 25N10G-TN3-R-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V 0.035 at VGS = 4.5 V ID (A) 40.
25N10G-TN3-R Key Features
- Trench Power MOSFETS
- 175 °C Junction Temperature
- Low Thermal Resistance Package