2622GY - Dual N-Channel MOSFET

Datasheet Summary

Features

Halogen-free According to IEC 61249-2-21 Definition.
Low On-Resistance: 1.8 Ω.
Low Threshold: 2 V (typ. ).
Low Input Capacitance: 30 pF.
Fast Switching Speed: 25 ns.
Low Input and Output Leakage.
TrenchFET® Power MOSFET.
Compliant to RoHS Directive 2002/95/EC.

VBsemi

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Datasheet Details

Part number	2622GY
Manufacturer	VBsemi
File Size	343.95 KB
Description	Dual N-Channel MOSFET
Datasheet	2622GY Datasheet
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2622GY-VB 2622GY-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 1.8 at VGS = 10 V ID (mA) 350 G1 3 mm S2 G2 D1 TSOP-6 Top View 1 6 D1 2 5 S1 3 4 D2 2.85 mm D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.8 Ω • Low Threshold: 2 V (typ.

Published: Jul 18, 2024 |