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2N04H4 Datasheet PDF

VBsemi Electronics 2N04H4

N-Channel 40V MOSFET

Part No. 2N04H4
Datasheet 2N04H4 Download
Manufacturer VBsemi Electronics
Description N-Channel 40V MOSFET
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2N04H4 datasheet page 1 preview

FEATURES

● ThunderFET® power MOSFET
● Maximum 175 °C junction temperature
● 100 % Rg and UIS tested
● Material categorization: for definitions of compliance please see D TO-263 G S D G S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). SYMBOL RthJA RthJC LIMIT 40 ± 20 100 60 220 50 125 150 b 98 b -55 to +175 LIMIT 40 0.75 UNIT V A mJ W °C UNIT °C/W E-mail:China@VBsemi TEL:86-755-83251052 1 2N04H4 TO263 SPECIFIC...
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