VBsemi Electronics 2N06L13
N-Channel MOSFET
| Part No. | 2N06L13 |
|---|---|
| Datasheet | 2N06L13 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 175 °C Junction Temperature Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 45 35 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS 20 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 100 3a W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec. t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 18 40 3.2 Maximum 22 50 4 Unit °C/W 1 2N06L13-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-S...
