VBsemi Electronics 2N0807
N-Channel 80V (D-S) MOSFET
| Part No. | 2N0807 |
|---|---|
| Datasheet | 2N0807 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 80V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
APPLICATIONS
● Primary Side Switching● Synchronous Rectification
● DC/AC Inverters
● LED Backlighting D G Top View GD S
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. t 10 sec Steady State Symbol RthJA RthJC S N-Channel MOSFET Limit 80 ± 20 100a...
