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2N7002E-T1-GE3 - N-Channel 60V MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Low Threshold: 2 V (typ. ).
  • Low Input Capacitance: 25 pF.
  • Fast Switching Speed: 25 ns.
  • Low Input and Output Leakage.
  • TrenchFET® Power MOSFET.
  • Compliant to RoHS Directive 2002/95/EC.

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2N7002E-T1-GE3-VB 2N7002E-T1-GE3-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA) 250 SOT-23 G1 3D S2 Top View D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • High-Speed Circuits • Low Error Voltage APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.