2N7002E-T1-GE3 Description
2N7002E-T1-GE3-VB 2N7002E-T1-GE3-VB Datasheet N-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA) 250 SOT-23 G1 3D S2 Top View D G S N-Channel MOSFET.
2N7002E-T1-GE3 Key Features
- Halogen-free According to IEC 61249-2-21
- Low Threshold: 2 V (typ.)
- Low Input Capacitance: 25 pF
- Fast Switching Speed: 25 ns
- Low Input and Output Leakage
- TrenchFET® Power MOSFET
- pliant to RoHS Directive 2002/95/EC
- Low Offset Voltage
- Low-Voltage Operation
- Easily Driven Without Buffer